| PART |
Description |
Maker |
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| BC32725TA BC32725TFR BC327ABU BC32740BU BC32725TAR |
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| 15DF8 |
1 A, 800 V, SILICON, SIGNAL DIODE
|
NIHON INTER ELECTRONICS CORP
|
| 1N4004GPE/4G 1N4005GPE/100 1N4002GPE/100 1N4003GPE |
Diodes
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
|
Vishay Beyschlag
|
| HT11G10 HT17G |
1.0 AMP. Glass Passivated High Efficient Rectifiers
1 A, 800 V, SILICON, SIGNAL DIODE
|
Taiwan Semiconductor Company, Ltd
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2N6509TG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 25 AMPERES RMS 50 thru 800 VOLTS 25 A, 800 V, SCR, TO-220AB
|
ON Semiconductor
|
| SW04PCR020 SW20KBN805 BR935 SW08KBN805 |
30 A, 400 V, SILICON, RECTIFIER DIODE
800 A, 2000 V, SILICON, RECTIFIER DIODE
935 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 800 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| BCW66G BCW65A BCW66F BCW65 Q62702-C1892 BCW65B BCW |
NPN Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SR02150 SR0220 SR02100-HF-T SR02200-HF-F SR0220-HF |
LOW Vf SCHOTTKY BARRIER RECTIFIER
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 20 V, SILICON, SIGNAL DIODE, DO-41
0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-41
|
Rectron Semiconductor
RECTRON LTD
|
| BC337 2N5836 BC327 |
800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
RF SMALL SIGNAL TRANSISTOR
800 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
|
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